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| SHINDENGEN VR Series Power MOSFET N-Channel Enhancement type 2SK1931 ( F5E20 ) 200V 5A FEATURES *oe Applicable to 4V drive. *oe static Rds(on) is small. The *oe Built-in ZD for Gate Protection. APPLICATION *oe DC/DC converters *oe Power supplies of DC 12-24V input *oe Product related to Integrated Service Digital Network OUTLINE DIMENSIONS Case : E-pack (Unit : mm) RATINGS *oeAbsolute Maximum Ratings * = 25*Z*j Tc i Item Symbol Storage Temperature Tstg Channel Temperature Tch Drain-Source Voltage VDSS Gate-Source Voltage VGSS Continuous Drain Current* DC*j i ID Continuous Drain Current* Peak) i IDP Continuous Source Current* DC*j i IS Total Power Dissipation PT Conditions Ratings -55*150 150 200 *}30 5 10 5 20 Unit *Z V A W Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd VR Series Power MOSFET Electrical Characteristics Tc = 25 Item Symbol V(BR)DSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current gfs Forward Tranconductance Static Drain-Source On-tate Resistance RDS(ON) VTH Gate Threshold Voltage VSD Source-Drain Diode Forward Voltage jc Thermal Resistance Total Gate Charge Qg Input Capacitance Ciss Reverse Transfer Capacitance Crss Output Capacitance Coss Turn-On Time ton Turn-Off Time toff Conditions ID = 1mA, VGS = 0V VDS = 200V, VGS = 0V VGS = 30V, VDS = 0V ID = 2.5A, VDS = 10V ID = 2.5A, VGS = 10V ID = 1mA, VDS = 10V IS = 2.5A, VGS = 0V junction to case VGS = 10V, ID = 5A, VDD = 150V VDS = 10V, VGS = 0V, f = 1MHZ ID = 2.5A, VGS = 10V, RL = 40 2SK1931 ( F5E20 ) Min. 200 Typ. Max. 250 0.1 0.9 2 1.8 0.45 3 Unit V A S V 11 360 45 190 55 75 0.65 4 1.5 6.25 / nC pF 110 150 ns Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd 2SK1931 10 Transfer Characteristics 8 Tc = -55C 25C 100C 150C Drain Current ID [A] 6 4 2 VDS = 10V pulse test TYP 0 5 10 15 20 0 Gate-Source Voltage VGS [V] 2SK1931 Static Drain-Source On-state Resistance Static Drain-Source On-state Resistance RDS(ON) [] 1 ID = 2.5A 0.1 VGS = 10V pulse test TYP -50 0 50 100 150 Case Temperature Tc [C] 2SK1931 5 Gate Threshold Voltage Gate Threshold Voltage VTH [V] 4 3 2 1 VDS = 10V ID = 1mA TYP -50 0 50 100 150 0 Case Temperature Tc [C] 2SK1931 Safe Operating Area 10 100s 200s Drain Current ID [A] R DS(ON) limit 1 1ms 10ms 100ms 0.1 DC Tc = 25C Single Pulse 1 10 100 Drain-Source Voltage VDS [V] 2SK1931 Transient Thermal Impedance 10 1 Transient Thermal Impedance jc(t) [C/W] 0.1 10-4 10-3 10-2 10-1 100 Time t [s] 2SK1931 1000 Capacitance Ciss Capacitance Ciss Coss Crss [pF] 100 Coss Crss 10 Tc=25C TYP 0 20 40 60 80 100 Drain-Source Voltage VDS [V] 2SK1931 100 Power Derating 80 Power Derating [%] 60 40 20 0 0 50 100 150 Case Temperature Tc [C] |
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